The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Jul. 02, 2001
Hynix Semiconductor Inc., , KR;
Abstract
The present invention discloses a method for forming a gate for semiconductor devices by depositing a TaO N film as a gate oxide film. The method includes the steps of providing a semiconductor substrate where a device isolation film has been formed, growing an SiO or SiON film on the semiconductor substrate, depositing an amorphous TaO N film on the SiO or SiON film, performing a low temperature annealing process to improve quality of the amorphous TaO N film, performing a high temperature annealing process ex-situ to remove organic substances and nitrogen in the amorphous TaO N film, and crystallize the amorphous TaO N film, and depositing a metal barrier film on the crystallized TaO N film, and depositing a polysilicon film or metal film for a gate electrode on the metal barrier film.