The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2002
Filed:
Aug. 09, 2001
Takayuki Iwasakii, Hitachi, JP;
Yusuke Takeuchi, Hachiouji, JP;
Yoshiaki Yuyama, Fussa, JP;
Shinichi Tanabe, Ome, JP;
Koki Sakai, Koganei, JP;
Minehiro Nemoto, Hitachi, JP;
Seigo Yukutake, Hitachinaka, JP;
Yasuyuki Kojima, Hitachi, JP;
Atsuo Watanabe, Hitachiota, JP;
Mitsuaki Horiuchi, Hachiouji, JP;
Other;
Abstract
A circuit region on a main surface of an SOI substrate, and a isolating region defined by insulating isolation trenches and are connected by a wiring resistor, or a diffused resistor in the SOI substrate. The isolating region and an intermediate region are connected by a wiring resistor, or a diffused resistor in the SOI substrate. Furthermore, a circuit region on a main surface of an SOI substrate, and a isolating region defined by insulating isolation trenches and are connected by a wiring resistor, or a diffused resistor in the SOI substrate. The isolating region and an intermediate region are connected by a wiring resistor, or a diffused resistor in the SOI substrate. As a result, distribution of voltage applied between the circuit regions and by the wiring resistors or the diffused resistors to can increase the withstand voltage of a semiconductor integrated circuit.