The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2002
Filed:
Aug. 24, 2000
Thomas S. Rupp, Stormville, NY (US);
Scott Halle, Hopewell Junction, NY (US);
Other;
Abstract
The present provides a method for tailoring silicon dioxide source and drain implants and, if desired, extension implants of different devices used on a semiconductor wafer in order to realize shallow junctions and minimize the region of overlap between the gate and source and drain regions and any extension implants. The method includes the steps of applying a mask over a first gate structure positioned on a semiconductor substrate, depositing a layer of a spacer material over the surface of the first gate structure and a second gate structure adjacent to the first gate structure, etching the spacer material so that a portion of the spacer material remains on the second gate sidewalls and a sidewall of the block out mask, implanting ions into the semiconductor substrate into a region defined between the spacer material on the block out mask and the second gate to form a source or drain region, and removing the spacer material and block out mask. If desired, a second etch can be performed on the spacer material to reduce spacer thickness, and second ions can be implanted into the semiconductor substrate into an implant region defined between the spacer material remaining after the second etch.