The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2002

Filed:

Dec. 11, 2000
Applicant:
Inventors:

Nobuo Shimazu, Machida, JP;

Takao Utsumi, Watchung, NJ (US);

Assignee:

LEEPL Corporatin, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ;
Abstract

A method for manufacturing a mask which is used in an electron beam proximity exposure apparatus comprising an electron beam source which emits a collimated electron beam, the mask having an aperture which is arranged on a path of the electron beam, and a stage which holds and moves an object, wherein the mask is arranged in proximity to a surface of the object and a pattern corresponding to the aperture of the mask is exposed on the surface of the object with the electron beam having passed through the aperture, the method comprises the steps of: dividing the mask into a plurality of partial areas, and forming a plurality of partial masks which have apertures with patterns identical with the plurality of partial areas, respectively; and manufacturing the mask by exposing the patterns of the plurality of partial masks on corresponding positions of a mask substrate in an electron beam proximity exposure method. Thus, the method of manufacturing the masks for the electron beam proximity exposure at reduced costs is accomplished.


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