The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Mar. 30, 2001
Applicant:
Inventors:
Sean M. Koehl, Sunnyvale, CA (US);
Dean Samara-Rubio, Pleasanton, CA (US);
Ding Yi, Santa Clara, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01H 3/776 ;
U.S. Cl.
CPC ...
H01H 3/776 ;
Abstract
A method for programming an antifuse circuit that includes a capacitor and a detector. The capacitor is formed using standard MOS processes in a well. The gate serves as one electrode and the well serves as another electrode of the capacitor. The antifuse is programmed by eternally provided radiation that can rupture the gate oxide so that the gate and the well can contact each other. The gate and well form a PN junction, transforming the capacitor into a diode. The diode provides the conductive path of the programmed antifuse.