The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2002

Filed:

Oct. 19, 2001
Applicant:
Inventors:

Hidetoshi Nakanishi, Yokohama, JP;

Masakazu Kobayashi, Kawasaki, JP;

Toshio Chaki, Hyogo-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/974 ;
U.S. Cl.
CPC ...
H01L 2/974 ;
Abstract

In order that the threshold value of a cell separated from an emitter wire bonding portion (W , W ) be larger than that of a cell immediately below the emitter wire bonding portion, the area of a diffusion layer ( ) of a cell separated from the wire bonding portion is made larger than that of a diffusion layer ( ) for connecting an emitter electrode ( ) and a base region ( ) in a cell immediately below the wire bonding portion. This allows a hole current to be discharged outside via an emitter wire within a short time period, without adversely affecting the operating characteristics and the steady loss, in a position where this hole current readily remains upon turn-off in a conventional IGBT. This shortens the fall time and reduces the switching loss.


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