The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Dec. 30, 1998
Applicant:
Inventors:
Assignee:
Agere Systems Guardian Corp., Allentown, PA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
Abstract
A method and structure providing N-profile engineering at the poly/gate oxide and gate oxide/Si interfaces of a layered polysilicon/amorphous silicon structure of a semiconductor device. NH annealing provides for the introduction of nitrogen to the interface, where the nitrogen suppresses Boron diffusion, improves gate oxide integrity, and reduces the sites available for trapping hot carriers which degrade device performance.
Roy, Pradip. (2002). N-profile engineering at the poly/gate oxide and gate oxide/si interfaces through nh3 annealing of a layered poly/amorphous-silicon structure (U.S. Patent No. 6440829). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6440829
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile