The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Jul. 26, 2001
Applicant:
Inventors:
Erh-Kun Lai, Tai-Chung Hsien, TW;
Chien-Hung Liu, Taipei, TW;
Shou-Wei Huang, Chi-Lung, TW;
Shyi-Shuh Pan, Kao-Hsiung, TW;
Ying-Tso Chen, Kao-Hsiung Hsien, TW;
Assignee:
Macronix International Co. Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
The present invention gives a method for creating a NROM memory from a semiconductor substrate. Numerous process steps are included to achieve this including forming shallow trench isolation areas, many ion implantation processes, ROM code implantation processes, photolithography and creation of layers and removal of layers. At the end of the process a mixed-signal circuit embedded NROM and NROM memory are created.