The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Jan. 28, 2000
Applicant:
Inventors:
Hitoshi Yamaguchi, Obu, JP;
Yoshitaka Noda, Chiryu, JP;
Assignee:
Denso Corporation, Kariya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract
Pch-MOS transistors to which a power supply potential is applied are respectively surrounded by first trenches, and Nch-MOS transistors to which a ground potential is applied are respectively surrounded by second trenches. The first trenches are surrounded by a third trench, and the second trenches are surrounded by a fourth trench. A silicon layer existing inside the third trench is set at the power source potential. The silicon layer existing between the third and fourth trenches are set at a floating state. Accordingly, each thickness of oxide layers filling the trenches can be reduced.