The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Oct. 27, 1998
Hideaki Fukuda, Tama, JP;
Baiei Kono, Tama, JP;
ASM Jpapan K.K., Tama, JP;
Abstract
There is provided an inductively coupled plasma processing apparatus for generating uniform and stable plasma at a high density. The plasma processing apparatus for semiconductors for processing an object to be processed utilizing plasma comprises an evacuated reaction chamber for processing the object to be processed therein, an antenna formed by a plurality of linear conductors provided in the reaction chamber and an RF power supply connected to one end of the plurality of linear conductors. The antenna is formed by at least three linear conductors disposed such that they radially extend from the center of the antenna at equal intervals from each other, and each of the linear conductors is connected to the ground at one end thereof and is connected to the RF power supply at the other end. An insulating process is provided on the surface of the linear conductors of said antenna. The plasma processing apparatus for semiconductors according to the invention further comprises an electromagnet for generating a magnetic field in a direction orthogonal to an induced electrical field.