The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Aug. 25, 1995
Applicant:
Inventors:
Hieu Van Tran, San Jose, CA (US);
Trevor Blyth, Milpitas, CA (US);
Assignee:
Winbond Electronics Corporation, Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H03L 5/00 ;
U.S. Cl.
CPC ...
H03L 5/00 ;
Abstract
A high voltage level shifter utilizing only low voltage PMOS and low voltage NMOS devices. The high voltage level shifter is used to distribute the high voltage almost equally among the PMOS devices and almost equally among the NMOS devices to meet the device electrical specification of low voltage MOS devices for various breakdown mechanisms. A layout technique is also used to achieve a much higher junction breakdown of N+ drain to P-substrate and a better gated diode breakdown of NMOS devices.