The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Aug. 31, 2000
Applicant:
Inventor:
Guarionex Morales, Sunnyvale, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ; H01L 2/1469 ;
Abstract
Multi-metallization level semiconductor devices are formed without degrading a low k dielectric gap fill material due to multiple pre-metallization degassing/outgassing heat treatments. Degradation of the low k material is substantially reduced or eliminated by employing time intervals for heat treatment which are not longer than the longest metal deposition step and temperatures below that which the dielectric material decomposes.