Process flow for ars mover using selenidation wafer bonding before processing a media side of a rotor wafer

Abstract

An improved process flow for an atomic resolution storage (ARS) system deposits conductive electrodes on a media side of a rotor wafer before wafer thinning process, i.e., grinding and CMP, thus protecting the conductive electrodes on a media surface from the grinding process. In addition, the CMOS circuitry is formed in a stator wafer at a relatively later stage. Therefore, the CMOS circuitry is less likely to be damaged by heat processing. In addition, some of the necessary processing may be performed with loosened thermal budget. Finally, because wafer bonding of the rotor wafer and the stator wafer is performed at a later stage, there is less probability of degradation of the wafer bonding. Accordingly, device yield may be enhanced, leading to lower manufacturing cost.