The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Jan. 26, 2001
Toshimitsu Akane, Tokyo, JP;
Koji Sugioka, Wako, JP;
Katsumi Midorikawa, Wako, JP;
Jan J. Dubowski, Ottawa, CA;
Riken, Saitama, JP;
Abstract
A process for the formation of a cap layer for semiconductors with a low degree of contamination wherein the cap layer is easily formed on the surface of a semiconductor, and binding force thereof with the surface of the semiconductor is strong and stabilized, besides only the cap layer is selectively removed easily, comprises the steps of introducing nitrogen atom into a surface of a semiconductor; combining a component element of the semiconductor in the vicinity of the surface of the semiconductor into which the nitrogen atom has been introduced with the nitrogen atom to form a nitride compound being a compound of the component element of the semiconductor and the nitrogen atom; and utilizing the nitride compound as a cap layer for the surface of the semiconductor.