The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Mar. 23, 2000
Giovanna Dalla Libera, Monza, IT;
Bruno Vajana, Bergamo, IT;
Roberta Bottini, Lissone, IT;
Carlo Cremonesi, Vaprio D'Adda, IT;
SGS-Thomson Microelectronics, Agrate Brianza, IT;
Abstract
A memory cell for devices of the EEPROM type, formed in a portion of a semiconductor material substrate having a first conductivity type. The memory cell includes source and drain regions having a second conductivity type and extending at the sides of a gate oxide region which includes a thin tunnel oxide region. The memory cell also includes a region of electric continuity having the second conductivity type, being formed laterally and beneath the thin tunnel oxide region, and partly overlapping the drain region, and a channel region extending between the region of electric continuity and the source region. The memory cell further includes an implanted region having the first conductivity type and being formed laterally and beneath the gate oxide region and incorporating the channel region.