The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Apr. 26, 2001
Applicant:
Inventors:
Keisuke Hatano, Tokyo, JP;
Yasutaka Nakashiba, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
In a charge coupled device, trap levels formed by insulating layers or floating electrodes are formed on a semiconductor layer or a semiconductor substrate. Stationary charges are trapped in some of the trap levels or floating electrodes. The charge transfer electrodes are in self-alignment with potential barrier regions.