The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Sep. 28, 2001
Applicant:
Inventors:
Jingyu Lian, Wallkill, NY (US);
Kwong Hon Wong, Wappingers Falls, NY (US);
Katherine Saenger, Ossining, NY (US);
Chenting Lin, Poughkeepsie, NY (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/18242 ;
Abstract
A method for forming a crystalline dielectric layer deposits an amorphous metallic oxide dielectric layer on a surface. The amorphous metallic oxide dielectric layer is treated with a plasma at a temperature of less than or equal to 400 degrees Celsius to form a crystalline layer.