The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Jul. 28, 2000
Applicant:
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/176 ; H01L 2/144 ;
Abstract
A method of forming a semiconductor component having a conductive line ( ) and a silicide region ( ) that crosses a trench ( ). The method involves forming nitride sidewalls ( ) to protect the stack during the silicidation process.
Xia, Jie. (2002). Sidewall process for forming a low resistance source line (U.S. Patent No. 6429093). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6429093
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile