The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Jan. 11, 2000
Applicant:
Inventors:
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/160 ;
U.S. Cl.
CPC ...
H01L 2/160 ;
Abstract
In a nitride semiconductor of BpAlqGarInsN (0≦p≦1, 0≦q≦1, 0≦r≦1, 0≦s≦1, p+q+r+s=1), in particular a p-type nitride compound semiconductor, a point defect concentration of the p-type semiconductors is set to 1×10 cm or more. This makes it possible to obtain a high carrier concentration at room temperature.
Quick Actions:
Okuyama, Hiroyuki. (2002). Nitride semiconductor and a method thereof, a nitride semiconductor device and a method thereof (U.S. Patent No. 6429032). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6429032
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