The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2002
Filed:
Jan. 04, 2001
Hong-Hsiang Tsai, Hsinchu, TW;
Hsi-Chuan Chen, Tainan, TW;
Winbond Electronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a trench capacitor includes forming a trench in a substrate; forming a conductive diffusion region in the substrate surrounding a lower portion of the trench; forming a dielectric layer along an inner surface of the trench; and filling the trench with a first doped polysilicon layer. A first recess is formed to expose an upper portion of the inner sidewall of the trench. A collar dielectric layer is formed on the exposed inner sidewall. The first recess is filled with a second doped polysilicon layer. A second recess is formed to expose a part of the upper portion of the inner sidewall. A gap is formed between the exposed inner sidewall and the second doped polysilicon layer, and filled with a doped polysilicon layer converted from an undoped polysilicon layer.