The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2002
Filed:
Jan. 22, 2002
Applicant:
Inventors:
Han-Sung Chen, Hsin-Chu, TW;
Nai-Ping Kuo, Hsin-Chu, TW;
Kuo-Yu Liao, Pan-Chiao, TW;
Chun-Hsiung Hung, Hsin-Chu, TW;
Assignee:
Macronix International Co. Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/628 ;
U.S. Cl.
CPC ...
G11C 1/628 ;
Abstract
A reference current is generated by inputting an adjusting current, which is about two or three micro amperes larger than the drain current of the NROM cell having a highest threshold voltage of the flash memory, a reference current with an initial value, effectively the same as the drain current of the NROM cell with a lowest threshold voltage. The method involves sensing the difference between the reference current decreasing from its initial value, and the adjusting current under a predetermined memory speed.