The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2002
Filed:
Feb. 26, 1997
Applicant:
Inventor:
Shuji Asai, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/930 ; H01L 2/9167 ; H01L 2/9207 ; H01L 2/9227 ;
U.S. Cl.
CPC ...
H01L 2/930 ; H01L 2/9167 ; H01L 2/9207 ; H01L 2/9227 ;
Abstract
A compound semiconductor device having improved backgate voltage resistance characteristics. To improve the backgate voltage resistance of a compound semiconductor device having field effect transistors on a main surface of a semi-insulating substrate, boron ions are implanted on the rear surface to form a defect-rich layer having carrier recombination centers.