The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2002
Filed:
Jun. 28, 2000
Applicant:
Inventors:
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A transistor structure is provided comprising a source region having a N source region and a N lightly doped source region. The structure also comprises a drain region having a N drain region and a N lightly doped drain region. A P heavily doped region is provided. The P region resides alongside at least a portion of at least one of the N lightly doped source region and N lightly doped drain region. A P body region resides below a gate of the device and between the source and drain regions. The P heavily doped region provides a capacitive coupling between a body region and the gate of the device and form a capacitive voltage divider with the junction capacitance of the device.