Three device dram cell with integrated capacitor and local interconnect

Abstract

A semiconductor integrated circuit memory cell, including at least three transistors and a capacitor to form a DRAM. The memory cell is fabricated on a semiconductor substrate including impurity regions, and using two semiconductor films, with dielectric films between the semiconductor films. The capacitor contains two electrodes. A substrate impurity region forms one of the electrodes; the other electrode is a semiconductor film which connects the gate of one device to an impurity region of another. The method for manufacturing the above-described integrated circuit, which may be used for the manufacture of similar circuits, is also disclosed.