The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
Feb. 02, 2000
Applicant:
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract
An integrated circuit (IC) including an integral, high k dielectric de-coupling capacitor constructed using a single conductive layer within the IC structure. The IC comprises a substrate, a dielectric layer disposed over the substrate, and a conductive layer disposed over the dielectric layer. The conductive layer includes a first line disposed adjacent to a second line, and a high k dielectric material disposed between the first line and the second line. The capacitor is formed between the first line and the second line separated by the high k dielectric material. The capacitor is connected by coupling the first line to a signal and coupling the second line to a capacitor signal.