The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
Mar. 17, 2000
Howard T. Barrett, Starksboro, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Toshiharu Furukawa, Essex Junction, VT (US);
James A. Slinkman, Montpelier, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A substrate, such as a semiconductor chip or wafer, is implanted along with product wafers in an ion implant vacuum system. The substrate is then annealed in an annealing step that is accomplished while the substrate is within the vacuum system. The annealer is a rapid thermal annealer, such as a laser annealer or a flash lamp annealer. The annealing step does not affect the product wafers. Then a measurement is performed on the implanted and annealed substrate while it is within the vacuum system that can be suitably correlated with implant dose. The measurement can be with a technique such as a four point probe or with a tool that measures optical reflectivity from a surface of the implanted substrate. An additional implant can then be provided to product wafers if necessary to come closer to the desired dose.