The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
Jun. 26, 2001
Jung-Chih Hu, Kaohsiung, TW;
Lih-Juann Chen, Hsin-Chu, TW;
Abstract
A method for improving the moisture absorption of porous low dielectric film in an interconnect structure is disclosed. The porous low-k dielectric layer such as porous hydrosilsesquioxane (porous HSQ) or porous methyl silsesquioxane (porous MSQ) is spun-on the etching stop layer. After plasma process, the porous low dielectric film has a plurality of dangling bonds. Then, the wafer is placed in the supplementary instrument with hydrophobic reactive solution. Next, the hydrophobic protection film is formed on surface and sidewall of porous low-k dielectric film to improve the moisture absorption of porous low-k dielectric film and the leakage current is reduced in subsequently processes.