The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
Apr. 05, 2000
Sanjeev Jain, Santa Clara, CA (US);
Somnath Nag, Saratoga, CA (US);
Gerrit Kooi, Sunnyvale, CA (US);
M. Ziaul Karim, San Jose, CA (US);
Kenneth P. MacWilliams, Los Gatos, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
An amorphous material containing silicon, carbon, hydrogen and nitrogen, provides a barrier/etch stop layer for use with low dielectric constant insulating layers and copper interconnects. The amorphous material is prepared by plasma assisted chemical vapor deposition (CVD) of alklysilanes together with nitrogen and ammonia. Material that at the same time has a dielectric constant less than 4.5, an electrical breakdown field about 5 MV/cm, and a leakage current less than or on the order of 1 nA/cm at a field strength of 1 Mv/cm has been obtained. The amorphous material meets the requirements for use as a barrier/etch stop layer in a standard damascene fabrication process.