The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
Jan. 27, 2000
Applicant:
Inventor:
Shigenobu Yokoshima, Utsunomiya, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13065 ;
U.S. Cl.
CPC ...
H01L 2/13065 ;
Abstract
In order to carry out ashing at a high efficiency without leaving any residue and also to inhibit corrosion of an underlying material of a resist and further to prevent particle contamination, a photoresist is ashed at a low temperature to be removed and a residue of the photoresist is removed at a high temperature.
Yokoshima, Shigenobu. (2002). Method of processing residue of ion implanted photoresist, and method of producing semiconductor device (U.S. Patent No. 6417080). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6417080
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile