The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2002

Filed:

Dec. 22, 2000
Applicant:
Inventor:

Rao Annapragada, Union City, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1461 ; H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1461 ; H01L 2/131 ;
Abstract

A method for making an etched organo-silicate-glass (OSG) layer over a substrate is provided. Generally an OSG layer is placed over the substrate. A patterned resist mask is placed over the OSG layer. The OSG layer is then etched, where the etching of the OSG layer forms at least one opening in the OSG layer and sidewall within the at least one opening. The patterned resist mask is then stripped by a plasma. A wet stripping is then used to remove the sidewalls. An antireflective coating may be placed between the resist and the OSG layer. In addition, an etched organo-silicate-glass (OSG) layer is provided. Generally an OSG layer is placed over the substrate. A patterned resist mask is placed over the OSG layer. The OSG layer is then etched, where the etching of the OSG layer forms at least one opening in the OSG layer and sidewall within the at least one opening. The patterned resist mask is then stripped by a plasma. A wet stripping is then used to remove the sidewalls.


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