The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2002
Filed:
Jul. 05, 2000
Applicant:
Inventor:
Sadaaki Masuoka, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18249 ; H01L 2/1336 ; H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/18249 ; H01L 2/1336 ; H01L 2/13205 ; H01L 2/14763 ;
Abstract
An objective of this invention is to provide a process for manufacturing a shared contact without protrusion toward an adjacent gate electrode and an improved shared contact. This invention allows a shared contact without protrusion from the gate electrode to be prepared by removing a gate electrode which is in contact with a dopant diffusion layer but is not used as a transistor element and forming a shared contact in the area. As a result, a cell size is larger in an SRAM according to this invention than in that according to the prior art.