The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2002
Filed:
Jul. 19, 2000
Alessandro Cesare Callegari, Yorktown Heights, NY (US);
Eduard Albert Cartier, New York, NY (US);
Michael Abramovich Gribelyuk, Poughquag, NY (US);
Harald Franz Okorn-Schmidt, Putnam Valley, NY (US);
Theodore Harold Zabel, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Within a method for forming a metal-silicon layer there is first provided a reactor chamber. There is then positioned within the reactor chamber a substrate spaced from a metal source target. There is also provided within the reactor chamber a minimum of a sputter material and a reactive silicon material. There is then sputtered the metal source target positioned within the reactor chamber with the sputter material provided within the reactor chamber in the presence of the reactive silicon material provided within the reactor chamber to form a metal-silicon layer over the substrate. The method is particularly useful for forming metal silicate layers, metal silicon nitride layers and metal silicon oxynitride layers within microelectronic fabrications. An alternative method employs: (1) a silicon source target rather than a metal source target; and (2) a reactive metal material rather than a reactive silicon material.