The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
May. 15, 2000
Applicant:
Inventors:
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ; H01L 2/144 ;
Abstract
A thermodynamically stable metallic contact for binary oxide-, nitride-, carbide or phosphide-semiconductors and a method of its preparation, the contact is formed in a high temperature reaction in vacuum of a metal bi-layer with the binary semiconductor substrate. With a proper choice of the two metallic layers, each metal forms a single phase with only one of binary semiconductor elements. The resulting phases form distinct layers in a thermodynamically stable sequence.
Shalish, Ilan. (2002). Technology for thermodynamically stable contacts for binary wide band gap semiconductors (U.S. Patent No. 6410460). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6410460
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile