The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Oct. 10, 2000
Gow-Wei Sun, Taipei Hsien, TW;
Pei-Jen Wang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of forming a local interconnect contact opening is described. A liner layer is formed on a substrate having a gate structure, a first source/drain region, and a second source/drain region formed thereon. A planarized dielectric layer is formed over the liner layer. A photoresist layer, which defines the location of the local interconnect contact opening, is formed over the dielectric layer. A one-step etching process is performed using a C F /CO/O /Ar etching gas and the liner layer as an etching stop. The dielectric layer exposed by the opening of the photoresist layer is removed to expose the liner layer. The liner layer and the photoresist layer are removed.