The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Jun. 15, 2001
Abstract
A method for forming a metal capacitor in a damascene process is provided. Before the metal capacitor is formed, the underlying interconnections are fabricated with Cu metal by damascene processes. The capacitor is formed by depositing a first metal layer, an insulator and a second metal layer. The stacked layers are then subjected to a masking process and an etching process to form the thin-film capacitor and the metal wire with the remaining insulator and the remaining second metal layer thereon. The remaining second metal layer located on the metal wire is removed by another masking process and another etching process. After forming the capacitor and the metal wire, the upper interconnections are fabricated with Cu metal by damascene processes.