The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
Jun. 14, 2000
Tsuyoshi Nagata, Tokyo, JP;
Yasutaka Nakashiba, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In order to improve transistor characteristics (operating characteristics), separation characteristics between pixels, and high withstanding voltage characteristics, a photoelectric conversion device has a first conductive type well layer provided on a semiconductor substrate and a second conductive type light receiving region (photoelectric conversion region) provided on the well layer . At a position under the light receiving region , there is provided a first conductive type impurity layer (depletion layer forming layer) in which the impurity concentration thereof is set to be lower than that of the well layer for enabling a reduction in the coupling capacitance, and a second conductive type impurity layer (reverse depletion layer forming layer) in which the impurity concentration thereof is set to be lower than that of the light receiving region , such that at least a part thereof is located inside of the light receiving region , seen in plan view, for enabling extension of the depletion layer.