The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
May. 18, 2000
Applicant:
Inventors:
Michihiro Sano, Odawara, JP;
Takafumi Yao, Aoba-ku Sendai-shi, Miyagi, JP;
Assignee:
Other;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/906 ;
U.S. Cl.
CPC ...
H01L 2/906 ;
Abstract
A method of growing p-type group II-VI compound semiconductor crystals, includes a step of forming ZnO layers and ZnTe layers alternately on a ZnO substrate, the ZnO layer being not doped with impurities and having a predetermined impurity concentration, and the ZnTe layer being doped with p-type impurities N to a predetermined impurity concentration or higher.
Quick Actions:
Sano, Michihiro. (2002). P-type group ii-vi compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals (U.S. Patent No. 6407405). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6407405
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile