The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
May. 05, 2000
Yingbo Jia, Fremont, CA (US);
Ohm-Guo Pan, Portland, OR (US);
Long-Ching Wang, Cupertino, CA (US);
Jeong Yeol Choi, Palo Alto, CA (US);
Guo-Qiang (Patrick) Lo, Portland, OR (US);
Shih-Ked Lee, Hillsboro, OR (US);
Integrated Device Technology, Inc., Santa Clara, CA (US);
Abstract
Methods for forming nitrided oxides in semiconductor devices by rapid thermal oxidation, in which a semiconductor substrate having an exposed silicon surface is placed into a thermal process chamber. Then, an ambient gas comprising N O and an inert gas such as argon or N is introduced into the process chamber. Next, the silicon surface is heated to a predefined process temperature, thereby oxidizing at least a portion of the silicon surface. Finally, the semiconductor substrate is cooled. An ultra-thin oxide layer with uniform oxide characteristics, such as more boron penetration resistance, good oxide composition and thickness uniformity, increased charge to breakdown voltage in the oxide layer, can be formed.