The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Feb. 26, 2001
Applicant:
Inventors:
Cynthia Blair, Morgan Hill, CA (US);
Jan K. Johansson, Upplands Vasby, CA (US);
Geoffrey Olson, San Jose, CA (US);
Assignee:
Ericsson Inc., Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract
When a field effect transistor (e.g., an LDMOSFET) saturates, the electrons traveling through the device slow down. This causes a phase shift with respect to electrons that travel through the device when the device is not saturated. By providing a shorter signal path for the electrons during saturation, it is possible to compensate for the slower speed of the electrons so that the electrons will take the same amount of time to travel through the device regardless of whether the device is saturated or not.