The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Feb. 02, 2001
Katsuji Iida, Nagoya, JP;
Takeshi Sakuma, Nagoya, JP;
Yuichiro Imanishi, Nagoya, JP;
Naohiro Shimizu, Miura, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
A semiconductor device constructed as a reverse conducting static induction thyristor including a thyristor section formed by an n silicon substrate , p gate regions formed in one surface of the substrate, a p anode region formed in the other surface of the substrate, a main diode section having a cathode region formed by the silicon substrate and an anode region formed in the one surface of the substrate, and a series arrangement of diodes including plural p anode regions , plural n cathode contact regions formed in the first surface of the substrate, and plural conductive layers connecting these anode regions and cathode contact legions successively. An anode and a cathode of the series arrangement of diodes are connected to a cathode electrode and an anode electrode of the thyristor section. Each of diodes in the series arrangement has a breakdown voltage lower than that of the thyristor section.