The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Dec. 27, 2000
Jonathan W. Hander, Texas City, TX (US);
Mahesh K. Sanganeria, Sunnyvale, CA (US);
Julian J. Hsieh, Pleasanton, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A method is provided that conditions the chamber walls of a HDP CVD reactor by forming a layer of doped material prior to depositing dielectric layers of the doped material onto wafers. A consistent deposition rate can be maintained during subsequent deposition. When deposition is halted, the chamber is cleaned and a thin layer of the doped material is formed on the walls. Consequently, the chamber is kept at equilibrium even during periods of idle, thereby allowing the deposition rates to be consistent even after deposition resumes after the idle periods. For prolonged idle times, the chamber is re-cleaned and the doped material is re-deposited periodically, such as every 12 hours.