The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Apr. 30, 2001
Applicant:
Inventor:
Chine-Gie Lou, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A method is disclosed to form a shallow trench isolation (STI) without reverse short channel effect. This is accomplished by forming oxidized polysilicon spacers in the dielectric layers above the trench, while also employing a thermal oxide liner on the inside walls of the trench in the substrate. The polyoxide spacers and the thermal oxide liner together prevent the undercutting at the corners or shoulders of the trench, thereby avoiding the common problem of having reverse short channel effect.
Lou, Chine-Gie. (2002). Method for forming a shallow trench isolation (U.S. Patent No. 6403486). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6403486
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile