The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Jul. 07, 1999
Applicant:
Inventor:
Sameer Parab, Milpitas, CA (US);
Assignee:
Elantec Semiconductor, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/130 ; H01L 2/146 ;
U.S. Cl.
CPC ...
H01L 2/130 ; H01L 2/146 ;
Abstract
A method for forming a semiconductor substrate is provided including the general sequential steps of: providing a handle wafer and a device wafer; implanting at least a first impurity region in a first surface of the device wafer; bonding the first surface of the device wafer to a first surface of the handle wafer having a silicon dioxide layer; removing a portion of the device wafer at a second surface; and forming an epitaxial silicon layer on the second surface of the device wafer. The process enables the thickness of the device wafer to be minimal.