The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Aug. 02, 2000
Keh-Fei Chris Chi, Taipei, TW;
Chao Hu Liang, Hsinchu Hsien, TW;
Kuo-Tung Chu, Taipei, TW;
Yu-Lin Tu, Taipei Hsien, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for reducing surface hump phenomena of a doped amorphous silicon layer. A dielectric layer is formed on the device, and subsequently, is patterned to form openings for exposure of the electrode surface of the device. A first deposition step is performed to form a conformal first doped amorphous silicon layer in the opening and on the dielectric layer. A second deposition step is performed to form an undoped or a lightly doped amorphous silicon layer on the first doped amorphous silicon layer and filling the openings completely. A third deposition step is performed to form a second doped amorphous silicon layer on the undoped or a lightly doped amorphous silicon layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile