The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Nov. 01, 1999
Other;
Abstract
The present invention relates to a plasma doping system capable of handling larger-diameter wafers and of introducing impurities to a shallow depth with a lower energy level. The plasma doping system includes a plasma generation chamber provided with a high-frequency power source and with antennas for generating a helicon plasma of a gas containing conduction type impurities. An impurity introduction chamber is provided with a substrate holding fixture. A plasma flow passage/shaping chamber provides a flow passage through which the helicon plasma flows from the plasma generation chamber to the impurity introduction chamber and has a magnetic field generator for generating a magnetic field to constrict the helicon plasma flowing therethrough.