The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Dec. 10, 1999
Hongjie Dai, Sunnyvale, CA (US);
Calvin F. Quate, Stanford, CA (US);
Robert J. Chen, Palo Alto, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Abstract
Single-walled carbon nanotube (SWNT) probe-tips for atomic force microscopy (AFM) are realized by direct synthesis of SWNTs on silicon pyramids integrated onto AFM cantilevers. The growth of SWNT tips involves dip coating of silicon pyramids with a liquid phase catalyst followed by chemical vapor deposition (CVD) using methane. Van der Waals interactions between the silicon pyramidal surface and the nanotube ensure proper SWNT orientation. Production of large scale arrays of nanotube probe tips using contact printing and controllably shortening nanotubes in an inert discharge are also described.