The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Feb. 04, 2000
Genichi Hatakoshi, Yokohama, JP;
Masaaki Onomura, Kawasaki, JP;
John Rennie, Tokyo, JP;
Masayuki Ishikawa, Yokohama, JP;
Shinya Nunoue, Ichikawa, JP;
Mariko Suzuki, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate in the order an n-type GaN contact layer, an n-type GaAlN cladding layer , an MQW active layer , a p-type GaAlN cladding layer , wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer and a light confining layer formed in a region except the ridge portion of the cladding layer on the double heterostructure, wherein a refractive index of the light confining layer is larger than that of a p-type GaAlN cladding layer.