The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Jan. 16, 2001
Promos Technologies, Inc., Hsin-Chu, TW;
Abstract
A process for fabricating silicon oxide filled, shallow trench isolation (STI), regions, in a semiconductor substrate, featuring the use of a disposable boro-phosphosilicate glass (BPSG), layer, used for planarization of various width, silicon oxide filled, STI regions, has been developed. After completely filling all STI shapes with a high density plasma (HDP), silicon oxide layer, resulting in a non-planar, HDP silicon oxide top surface topography, a BPSG layer is deposited. An anneal procedure is then performed resulting in a planar top surface topography of the reflowed BPSG layer. A chemical mechanical polishing procedure is next employed to remove the planar, reflowed BPSG layer, and portions of the underlying HDP silicon oxide, from the top surface of a silicon nitride stop layer, resulting in a planar top surface topography for all silicon oxide filled, insulator regions.