The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Nov. 19, 1999
Madhusudan Mukhopadhyay, Singapore, SG;
Chivukula Subrahmanyam, Singapore, SG;
Yelehanka Ramachandramurthy Pradeep, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A method for forming a multiple thickness gate oxide layer by implanting nitrogen ions in a first area of a semiconductor substrate while a second area of the semiconductor substrate is masked; implanting argon ions into the second area of the semiconductor substrate while the first area of the semiconductor substrate is masked; and thermally growing a gate oxide layer wherein, the oxide growth is retarded in the first area and enhanced in the second area. A threshold voltage implant and/or an anti-punchthrough implant can optionally be implanted into the semiconductor substrate prior to the nitrigen implant using the same implant mask as the nitrogen implant for a low voltage gate, and prior to the argon implant using the same implant mask as the argonm implant for a high voltage gate, further reducing processing steps.