The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Feb. 29, 2000
Applicant:
Inventors:
Hisayoshi Yamoto, Kanagawa, JP;
Hideo Yamanaka, Kanagawa, JP;
Yuichi Satou, Kanagawa, JP;
Hajime Yagi, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ;
Abstract
Single-crystal silicon is deposited on an insulating substrate ( ) with a crystalline sapphire layer ( ) formed thereon as a seed, to form a silicon epitaxial layer ( ). P-type impurity ions are implanted into a single-crystal silicon layer, and then N-type impurity ions are implanted to make a P-channel MOS transistor portion a single-crystal silicon layer ( ). In a single-crystal silicon layer ( ), an N source region ( ) and drain region ( ) of an N-channel MOS transistor are formed. Thus, a silicon layer is epitaxially grown uniformly at low temperatures.